Product
NEMST-HPE2018 series
Microwave Plasma Etching Machine
- High efficiency microwave (MW) plasma source design: 1011~1013/cm3.
- Unique Distribution Panel Design is employed to ensure uHigh-efficiency uniform plasma generation.
- No Damage on substrate/product By employing Filtered Plasma Design.
- Unique ECR (Electron Cyclotron Resonator) Design to create high-density plasma and extend the lifetime of isolation quartz plate.
- Large-area panel treatment is available.
- High Etching Rate (1~10 um / min in general.
- Very high treatment uniformity. (Up to 90%)
- Low Temperature Treatment is available. (≦ 120 ℃)
- Damage Free on the products.
- Large Area Treatment is available (e.g. 500 mm x 600 mm)
- Polymer Material: Polyimide, Parylene, FR4, BT, Teflon, etc.
- Silicon: Single-crystal Silicon, Polysilicon, Amorphous Silicon, etc.
- Passivation: Silicon Nitride (Si3N4) or Silicon Oxynitride (SiON).
- Dielectric: Silicon Dioxide (SiO2), High-k, and Low-k materials.
- Semiconductor Compound: GaN, GaAs, InP, SiC, etc.
- Metals: Aluminum (Al), Titanium (Ti), Metal Alloys, etc.
- Other Material: Sapphire, Diamond, ITO, PZT, etc.
- Semiconductor & Peripheral Processes: Various semiconductor processes, Wafer Reclaim.
- Advanced Packaging Technologies: WLP, PLP, 2.5D/3D IC, CoWoS, FOPLP, FOWLP.
- Substrate & PCB Technologies: IC Substrate, Substrate.
- Optoelectronics & MEMS: Micro-LED, MEMS (Micro-Electro-Mechanical Systems).